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Sic Heater Silicon Carbide Heating Elements U W I Type For Furnace

Name: Sic Heater Silicon Carbide Heating Elements U W I Type For Furnace
Brand: KEGU
Price: 200 USD

Best Sic Heater Silicon Carbide Heating Elements U W I Type For Furnace wholesale

Brand Name : KEGU

Place of Origin : China

Price : 200-500 yuan/kg

Payment Terms : L/C,D/A,D/P,T/T,Western Union,MoneyGram

Supply Ability : 2,000 pcs/month

Packaging Details : Strong wooden box for Global shipping

Model Number : Customizable

Material : SiC

Composition:SiC : ＞85%

Color : Black

Density : 2.5~2.6g/cm³

Max. Service Temp : 1380℃

Flexural Strength : 70-90 MPa

Size : Customized

Heat Conduction : 23.26 W/(m·℃)

Resistivity : 1000～2000 Ω·mm2/m

Tensile Strength : 39.2～49 MPa

Max. Service Temp. : 1500℃

Linear Thermal Expansion Coefficient (20-1500℃) : 5×10⁻⁶/℃

Electrical Resistivity : 1000~2000Ω·mm²/m

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U W I Type High Temperature Sic Heater Silicon Carbide Heating Elements For Furnace

Description

Highlight:

Furnace sic heater

High temperature sic heater

Silicon carbide sic heater

Product Description

silicon carbide SiC heating elements ( heater )

1) Material: Good quality green SiC poeders.
2) Product: A kind of non-metal high temperature electric heating element.
3) Production Process: Made into blank, silicided under high temperature and re-crystallized.
4) Usage: It is widely used in various high temperature laboratory furnace and other electric heating
devices, such as in the industries of magnet, ceramics, power metallurgy, glass, and metallurgy.
5) Character: Higher temperature, antioxidation, anticorrosion, increasing temperature fast, low
coefficient of thermal expansion and so on.
6) Heater Specifications and Resistance Range

Physical properties of elements:

Specific gravity	Bend strength	Hardness	Tensile Strength	Porosity rate	Radiancy
2.6~28g/cm3	>300kg	>9MOH'S	>150kg/cm3	<30%	0.85

The linear expansion coefficient, heat conductivity and specific heat of element will change along withtemperature change. And the relational data are the follows:

Temperature (c)	Linear expansion coefficient (10m/c)	Heat conductivity (kcal/M hrc)	Speciic heat (cal/g'c)
o	/	/	0.148
300	3.8	/	/
400	/	/	0.255
600	4.3	14-18	/
800	/	/	0.294
900	4.5	/	/
1100	/	12-16	/
1200	4.8	/	0.325
1300	/	10-14	/
1500	5.2	/	/

silicon carbide heating element.

Silicon carbide element use in construction, ceramic firing, float glass production, melting of non-ferrous metals, sintering,brazing, and other applications that require operating temperatures of up to 1625°C. Heating elements composed of silicon carbide are typically shaped as rods, tubes, or bars with single or multiple legs and metallized Aluminum extremities; other forms include dumbbells and double or single spirals. Our standard heating elements sizes range between 0.5 to 3 inches in diameters and 1 to 10 feet in length. Custom shapes and sizes are also available by request. Silicon carbide heating elements are generally immediately available in most volumes. American Elements also offers other forms of Silicon Carbide such as bricks, foam, honeycomb, powder (including micron and submicron powders), micronwhiskers, nanoparticles, sponges, sputtering targets, and wool. Additional technical, research and safety (MSDS) information is available.

Specification

Atmosphere	Furnace Temp(℃)	Surface Load(W/cm)	Acting to the element	Soive way
Ammonia	1290	3.8	Acting on SiC to form thus decrease SiO2 protective film	Active at dew point
COr	1450	3.1	Attack SiC	Protecting by quartz tube
18%CO	1500	4	No action	/
20%CO	1370	3.8	Adsorbing C grains to act on SiO2 Protective film	/
Halogen	704	3.8	Attacking SiC and decreasing SiOProtective film	Protecting by quartz tube
Hydrocarbon	1310	3.1	Adsorbing C grains causes hot pollution	Fill with enough air
Hydrogen	1290	3.1	Acting on SiC to form thus decrease SiO2 Protective film	Active at dew point
Methane	1370	3.1	Adsorbing C grains causes hot pollution	/
N	1370	3.1	Acting with SiC forms SiN insulating layer	/
Na	1310	3.8	Attack SiC	Protecting by quartz tube
SO2	1310	3.8	Attack SiC	Protecting by quartz tube
Vacuum	1204	3.8	/	/
Oxygen	1310	3.8	SiC is oxided	/
Waterldifferent contentsl	1090-1370	31-3.6	Acting on SiC forms hydtate of Silicon	/

Packing & Delivery

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